Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers
PBN-AR
Instytucja
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Informacje podstawowe
Główny język publikacji
angielski
Czasopismo
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (30pkt w roku publikacji)
ISSN
0268-1242
EISSN
1361-6641
Wydawca
IOP PUBLISHING LTD
DOI
URL
Rok publikacji
2018
Numer zeszytu
3
Strony od-do
035006
Numer tomu
33
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+ 4
Streszczenia
Język
angielski
Treść
In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.
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ORIGINAL_PAPER
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System-identifier
PX-5afac1dcd5deb6c4a91809fb
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