MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers
PBN-AR
Instytucja
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Informacje podstawowe
Główny język publikacji
angielski
Czasopismo
Journal of Crystal Growth (30pkt w roku publikacji)
ISSN
0022-0248
EISSN
Wydawca
ELSEVIER SCIENCE BV
DOI
URL
Rok publikacji
2017
Numer zeszytu
Strony od-do
22-29
Numer tomu
466
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
angielski
Molecular beam epitaxy
Semiconducting Ill-V materials
Quantum cascade lasers
High resolution X-ray diffraction
Streszczenia
Język
angielski
Treść
We investigate growth conditions for strain-compensated In0.67Ga0.33As/ln(0.36)Al(0.64)As/InP quantum cascade lasers (QCLs) by solid-source molecular beam epitaxy (SSMBE). The extensive discussion of growth procedures is presented. The technology was first elaborated for In0.53Ga0.47As/In0.52Al0.48As material system lattice matched to InP. After that QCLs with lattice matched active region were grown for validation of design and obtained material quality. The next step was elaboration of growth process and especially growth preparation procedures for strain compensated active regions. The grown structures were examined by HRXRD, AFM, and TEM techniques. The on-line implementation of obtained results in subsequent growth runs was crucial for achieving room temperature operating 4.4-mu m lasers. For uncoated devices with Fabry-Perrot resonator up to 250 mW of optical power per facet at 300 K was obtained under pulsed conditions. The paper focuses on MBE technology and presents developed algorithm for strain compensated QCL growth.
Cechy publikacji
ORIGINAL_PAPER
Inne
System-identifier
PX-59c8b492d5de156e7ccf287d
CrossrefMetadata from Crossref logo
Cytowania
Liczba prac cytujących tę pracę
Brak danych
Referencje
Liczba prac cytowanych przez tę pracę
Brak danych