Growth and Characterization of (Cd, Mn)Te
PBN-AR
Instytucja
Instytut Fizyki Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
en
Czasopismo
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN
0018-9499
EISSN
Wydawca
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI
URL
Rok publikacji
2013
Numer zeszytu
5
Strony od-do
3805-3814
Numer tomu
60
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
en
Annealing (Cd Mn) Te characterization crystal growth defects detectors electrical contacts
Streszczenia
Język
en
Treść
The present article presents technology, required for repeatable manufacturing of the 1.5 and 2 inch crystal rods of (Cd, Mn) Te is discussed. In order to obtain semiinsultaing crystals, compensation and annealing in Cd-vapours was used. Vanadium was mainly used as the compensating dopant. The resistivity of the obtained monocrystalline plates was around 10(9) Omega cm, and the mu tau-product was about 10(-3) cm(2)/V. Mapping of the resistivity was performed on both as-grown crystals and the crystals annealed in the saturated Cd vapour. As-grown (undoped) crystals were inhomogeneous and their resistivities were in the range 10(5) - 10(6) Omega cm. After annealing resistivity increased up to 1-2 . 10(9) Omega cm and better homogeneity could be seen. Annealing in saturated Cd-vapours had influence on tellurium inclusions/precipitates. It was studied by IR transmission microscopy. For as-grown samples the density of Te inclusions (>1 mu m) was approximate to 3 . 10(5) cm(-3) but for annealed samples was approximate to 10(4) cm(-3). The concentrations (measured by SIMS) of the unintentional impurities Na, Ca, and Ga were in the region 10(15) - 10(16) cm(-3), corresponding well with the purity (6N) of the elements used for crystallization of our (Cd, Mn) Te. The low temperature photoluminescence (PL) measurements indicated significantly lowered concentrations of acceptors after annealing. Nearly ohmic contacts to the high resistivity (Cd, Mn) Te plates were obtained by deposition of the amorphous layers of heavily doped semiconductor (ZnTe: Sb). We undertook the present work to show that low vanadium doping level and proper annealing conditions are sufficient to obtain detector grade material.
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Original article
Original article presents the results of original research or experiment.
Inne
System-identifier
PBN-R:577400
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