Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
PBN-AR
Instytucja
Wydział Elektroniki i Technik Informacyjnych (Politechnika Warszawska)
Informacje podstawowe
Główny język publikacji
en
Czasopismo
Optica Applicata
ISSN
0078-5466
EISSN
Wydawca
Wroclaw University of Technology
DOI
Rok publikacji
2013
Numer zeszytu
1
Strony od-do
1
Numer tomu
XLIII
Identyfikator DOI
Liczba arkuszy
0.3
Autorzy
(liczba autorów: 7)
Pozostali autorzy
+ 6
Słowa kluczowe
en
Pd, carbon, film, SEM, TEM.
Streszczenia
Język
en
Treść
Morphology changes of C–Pd films prepared in physical vapor deposition (PVD) process and next annealed in a temperature of 650 °C during different time were studied. These studies were performed with electron microscopy methods (scanning SEM and transmission TEM). It was found that not annealed films are flat and they are composed of grains with composite character and size of 100–200 nm. Pd nanocrystallite of a diameter of a few nanometers in some carbon matrix was placed in these grains. For annealed films, a formation of palladium nanograins with different sizes and shapes as well as a porous carbon matrix were observed. High resolution TEM investigation was used to determine a structure of all these grains. An increase in duration time of annealing process led to diminishing of the porosity of carbon matrix and a number of Pd grains situated on the film surface. It was also stated that covering of Si with SiO2 layer prevents formation of palladium silicide.
Inne
System-identifier
WUT403760
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