Soft x-ray free-electron laser induced damage to inorganic scintillators
PBN-AR
Instytucja
Instytut Fizyki Polskiej Akademii Nauk
Źródłowe zdarzenia ewaluacyjne
Informacje podstawowe
Główny język publikacji
en
Czasopismo
Optical Materials Express
ISSN
2159-3930
EISSN
Wydawca
DOI
URL
Rok publikacji
2015
Numer zeszytu
2
Strony od-do
254-264
Numer tomu
5
Identyfikator DOI
Liczba arkuszy
Streszczenia
Język
en
Treść
An irreversible response of inorganic scintillators to intense soft x-ray laser radiation was investigated at the FLASH (Free-electron LASer in Hamburg) facility. Three ionic crystals, namely, Ce:YAG (cerium-doped yttrium aluminum garnet), PbWO4 (lead tungstate), and ZnO (zinc oxide), were exposed to single 4.6 nm ultra-short laser pulses of variable pulse energy (up to 12 mu J) under normal incidence conditions with tight focus. Damaged areas produced with various levels of pulse fluences, were analyzed on the surface of irradiated samples using differential interference contrast (DIC) and atomic force microscopy (AFM). The effective beam area of 22.2 +/- 2.2 mu m(2) was determined by means of the ablation imprints method with the use of poly(methyl methacrylate) - PMMA. Applied to the three inorganic materials, this procedure gave almost the same values of an effective area. The single-shot damage threshold fluence was determined for each of these inorganic materials. The Ce: YAG sample seems to be the most radiation resistant under the given irradiation conditions, its damage threshold was determined to be as high as 660.8 +/- 71.2 mJ/cm(2). Contrary to that, the PbWO4 sample exhibited the lowest radiation resistance with a threshold fluence of 62.6 +/- 11.9 mJ/cm(2). The threshold for ZnO was found to be 167.8 +/- 30.8 mJ/cm(2). Both interaction and material characteristics responsible for the damage threshold difference are discussed in the article.
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Original article
Original article presents the results of original research or experiment.
Inne
System-identifier
PBN-R:693204
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